SemiQ Inc., a designer, developer, and global supplier of high-performance silicon carbide (SiC) power semiconductors, has introduced a new family of 1700 V SiC MOSFETs optimized for medium-voltage, high-power conversion applications.including photovoltaic (PV) and wind inverters, energy storage systems (ESS), EV and roadside charging, uninterruptible power supplies (UPS), and induction heating/welding systems.
The QSiC™ 1700 V planar D-MOSFETs enable higher power densities, compact system designs, and lower overall system costs. Designed for reliability, the MOSFETs feature a rugged body diode with operational capability up to 175°C, undergo wafer-level burn-in (WLBI) screening to ensure oxide integrity, and are UIL avalanche tested to 600 mJ. Each device is tested to exceed 1900 V for enhanced system durability.
The QSiC 1700 V series is available in bare die format (GP2T030A170X) and as a 4-pin TO-247-4L discrete package (GP2T030A170H) featuring separate driver-source and gate pins for improved switching performance. Both configurations are also available in AEC-Q101 automotive-qualified versions (AS2T030A170X and AS2T030A170H).
To further simplify system integration, SemiQ has introduced three power modules based on the same 1700 V SiC MOSFET technology. This includes a standard 62 mm half-bridge module in an S3 package with an AlN-insulated baseplate and two SOT-227-packaged power modules designed for high-reliability applications.
Technical Specifications
The bare die MOSFETs feature an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side for improved thermal conductivity and ease of integration. Both bare die and TO-247-4L packaged devices support a continuous drain current of 83 A (25°C) and 61 A (100°C), with a pulsed drain current of 250 A (25°C). The gate threshold voltage is 2.7 V (25°C) and 2.1 V (125°C), while the RDS(ON) is 31 mΩ (25°C) and 57 mΩ (125°C). Both options feature an ultra-low gate-source leakage current of 10 nA, a fast reverse recovery time (tRR) of 17 ns, and a junction-to-case thermal resistance of 0.27°C/W.
The SOT-227 power modules (38.0 x 24.8 x 11.7 mm) offer increased power dissipation up to 652 W and continuous drain currents of 123 A (GCMX015A170S1-E1) and 88 A (GCMX030A170S1-E1). These modules also feature low switching losses, an optimized thermal resistance of 0.19°C/W and 0.36°C/W, and a direct-mount, isolated package design for efficient heat dissipation and simplified system integration.
The half-bridge module (61.4 x 106.4 x 30.9 mm, 9-pin S3 package) delivers 2113 W power dissipation with a continuous drain current of 397 A and a pulsed drain current of 700 A. It features low conduction and switching losses and a thermal resistance of 0.06°C/W, making it suitable for demanding industrial and power electronics applications.
Pricing and Availability
Sample quantities of the SemiQ 1700 V QSiC™ MOSFETs and power modules are now available for customer order. For technical specifications, sample requests, and volume pricing, visit SemiQ.com.
About SemiQ
SemiQ Inc. specializes in high-performance silicon carbide (SiC) power semiconductors designed for high-voltage applications. The company’s MOSFETs and diodes, available in discrete, module, and bare die formats, offer industry-leading reliability and efficiency across sectors including renewable energy, electric vehicle charging, automotive, medical, and energy storage applications. With over a decade of experience, SemiQ provides customized, high-density power solutions from initial concept through mass production. The company supports engineers and OEMs with thermal modeling, battery management system integration, and white-glove engineering support, ensuring optimal system performance.
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