Power Integrations, a semiconductor technology company specializing in high-voltage power conversion, has announced that it has successfully demonstrated its internally developed PowiGaN gallium nitride technology, now rated at up to 2200 V, extending GaN into higher-voltage power conversion applications for electric vehicles, battery-energy storage systems, photovoltaic inverters, AI data centers and high-voltage direct current infrastructure. The higher-voltage capability is intended to provide additional design margin as power systems move toward higher-voltage bus architectures, while retaining the high switching frequencies associated with GaN technology to support increased power density and more compact power conversion architectures.

PowiGaN was developed by Power Integrations as an alternative to traditional silicon MOSFET switching technology, with GaN switches used on the primary side of the company’s highly integrated offline flyback switcher ICs to reduce switching losses and enable smaller, lighter and more efficient power supplies. Power

Power Integrations 2200 V PowiGaN technology for high-voltage power conversion | EV + Battery Tech Monthly

Power Integrations has demonstrated its internally developed PowiGaN gallium nitride technology at voltage ratings of up to 2200 V for high-voltage power conversion applications.

Integrations has continued to extend the switching-voltage capabilities of the technology, with the new 2200 V rating moving PowiGaN further into voltage ranges traditionally served by silicon carbide. The development provides another semiconductor option for high-voltage systems and applications in which designers must balance switching frequency, conversion efficiency, system complexity and power density.

For electrification applications, the expanded voltage range is intended to support future EV battery and auxiliary power systems as manufacturers move toward higher system voltages, while also extending GaN capabilities for photovoltaic inverters and battery-energy storage systems. Higher-voltage power conversion is becoming increasingly important across these applications as designers work to reduce losses, increase power density and simplify conversion stages. The 2200 V PowiGaN technology provides a high-frequency alternative for applications that have traditionally relied on SiC or arrays of stacked, lower-voltage GaN devices.

The technology also addresses emerging high-voltage data center architectures as industry roadmaps move toward 1500 V distribution. Existing 1700 V PowiGaN devices are already being designed into single-stage auxiliary power applications, while 1250 V technology is applied within 800 VDC data center architectures. Extending PowiGaN to 2200 V broadens the available voltage range for future power conversion designs across data centers, EVs, renewable energy and HVDC infrastructure as these systems continue moving toward higher-voltage operation.

About Power Integrations

Power Integrations develops semiconductor technologies for high-voltage power conversion, with products supporting the generation, transmission, conversion and consumption of power across applications ranging from low-power electronics to electric vehicles, renewable energy, AI data centers and high-voltage infrastructure. Headquartered in San Jose, California, the company develops integrated circuits and related semiconductor technologies for energy-efficient power conversion. For more information, please click here.

Source/Photo Credit: Power Integrations

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Molly Bakewell Chamberlin
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